Vertical switch three-dimensional memory array

ABSTRACT

A memory device includes a substrate, and, disposed thereover, an array of vertical memory switches. In some embodiments, each switch has at least three terminals and a cross-sectional area less than 6F 2 .

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to and the benefit of U.S. ProvisionalPatent Application No. 61/209,725, filed on Mar. 10, 2009; U.S.Provisional Patent Application No. 61/273,163, filed on Jul. 31, 2009;U.S. Provisional Patent Application No. 61/275,169, filed on Aug. 26,2009; and U.S. Provisional Patent Application No. 61/281,388, filed onNov. 17, 2009. The entire disclosure of each of these applications isincorporated by reference herein.

TECHNICAL FIELD

In various embodiments, the present invention relates to arrays ofswitches utilized in memory devices, and more particularly to arrays oftransistors that have a high packing density for use in memory devices.

BACKGROUND

As advances continue to be made in the area of semiconductor memorydevices, high capacity and low cost are increasingly important. Inparticular, memory cell designs having small footprints are increasinglydesired to provide high density. For this reason, diode arrays areincreasingly finding utility in memory designs. However, because ofleakage currents in diode arrays, increasingly large arrays often resultin non-negligible total leakage currents. These leakage currents maygrow geometrically with the size of the array, resulting in higher powerconsumption. U.S. Pat. No. 7,376,008 (“the '008 patent”) describes thiscumulative leakage problem in detail, and the entire disclosure thereofis incorporated by reference herein. To deal with this leakage problem,diode array memories can be broken down into multiple tiles orsub-arrays such that only a portion of the entire array is energized ata given point in time. However, each sub-array or tile typicallyrequires some peripheral support circuitry and, as a result, willcontribute to a reduction in array efficiency. The '008 patent addressesthis problem through the use of current-level switching devices (CLSDs)and describes that when only a single row and a single column areenergized, with the remaining (i.e., non-selected) rows and columnsfloating, the total current leakage grows only linearly with the size ofthe array. However, CLSDs switch when a voltage level is exceeded and,as such, have analog characteristics—i.e., they are not purely digitaldevices. Many memory-design engineers are skilled in digital logicdesign, but fewer engineers are trained in analog design. Thus, theincreasing use of CLSDs leads to increased design complexity, time, andexpense.

Thus, a device more digital than CLSDs that facilitates low powerconsumption by minimizing leakage currents is highly desirable.Furthermore, such a memory device should be inexpensive to manufactureand should utilize existing manufacturing tools and techniques whileavoiding the use of materials that might contaminate manufacturingequipment.

SUMMARY

Embodiments of the present invention include memory arrays havingsubstantially the same packing density as a diode array, and techniquesfor their manufacture. Some embodiments utilize vertical switches, suchas MOS transistors, that may be tightly packed into an array forinformation-storage applications. Embodiments of the present inventionare useful for many information-storage technologies that require amemory cell having a switchable current path and high packing density.Specifically, embodiments of the invention yield a terabit memory arrayon a single die. Furthermore, some embodiments of the present inventioninclude conductive strapping features that help to compensate for theseries resistance of bit lines and/or word lines in order to providegreater current to a given memory cell while requiring lower supplyvoltages.

Embodiments of the invention may include peripheral and/or supportlogic. This logic may include transistors built with a verticalorientation and/or built at the same time as the transistors in thehigh-density storage array. The logic circuitry may utilize transistorswired in series to withstand higher voltages or transistors wired inparallel to accommodate higher currents. It may comprise transistorsthat are drawn on a mask or reticule to provide for larger features forgreater channel widths and, thereby, higher currents. Embodiments of theinvention may include self-aligned features, and may includeimplantation or other doping techniques to form source layers, channellayers, and/or drain layers.

Memory arrays fabricated in accordance with the present invention may beprogrammed with data including or consisting essentially of music,video, computer software, a computer application, reference data, text,and/or a diagram. The memory array may be disposed within a removablememory storage device. The memory array may include or consistessentially of a plurality of storage cells, at least one of which mayinclude or consist essentially of a phase-change material. The datatypically includes error-correcting bits, but might not in some cases.

Embodiments of the invention are implemented with silicon orsilicon-based materials; however, other semiconducting materials mayalso be utilized, including III-V semiconductors, organicsemiconductors, field-emitting devices, and the like. Embodiments of theinvention may be implemented in conjunction with various informationstorage materials and techniques including resistive change materials,phase-change materials, magnetic materials (for MRAM), one-timeprogrammable (OTP) materials such as a fuse or anti-fuse material,charged oxide materials, trapped charge devices, and many otherprogrammable materials.

Embodiments of the present invention also relates to the manufacture andprocessing of semiconductor devices, and more particularly to methodsfor fabricating three-dimensional memory devices having a programmableelement that is self-aligned.

Representative types of programmable elements for memory cells includephase-change materials, such as chalcogenide alloys, andresistive-change materials. These and other materials are switched fromone stored data state to another by heating the material, which isaccomplished by passing a current through the material. To effectivelyheat the material without passing excessive current (and therebyconsuming considerable power), the current may be forced through aconstricted area in order to increase the current density through thatarea and the concomitant heating. In addition, memory cells inaccordance with embodiments of the invention may be one-timeprogrammable (OTP) or multiply programmable or rewritable, and mayalternatively include fusible or antifusible materials.

Embodiments of the present invention also include methods of processinga semiconductor device such that a constricted area is formed at thejunction of a contacting material and a programmable-element material orat the junction of two portions of the programmable-element material.Embodiments include memory cells having multiple storage bits per cell,including cells having one to eight bits per cell or even more.

Embodiments of the present invention also include methods for formingfeatures (such as conductive posts) between other features separated bythe minimum dimension of the lithographic techniques utilized to formthe device. Embodiments include methods for processing aprogrammable-element portion of a memory cell such that the programmablematerial is not exposed to high temperatures that might damage it, eventhat programmable material utilized in stacked or three-dimensionalmemory variants. Embodiments also include methods for forming memorycells having one or more layers of programmable elements, where at leastof the layers has one or more programmable elements, and where one ormore of the elements has two or more programmable states. Thus, thenumber of bits of information per memory cell is a function of thenumber of layers, the number of programmable elements per layer, and thenumber of programmable states per element. For example, a memory cellhaving eight layers per cell, two elements per layer, and four statesper element (two bits per element) has 32 bits per cell.

Embodiments of the present invention include methods for constructing amemory cell having an active device in the substrate (e.g., atransistor, a thristor, a nonlinear current-steering device such as adiode, a field emitter, or the like) that is shared by multipleprogrammable elements. The cell may have one or more layers of suchprogrammable elements.

In an aspect, embodiments of the invention feature a memory device thatincludes a substrate, and, disposed thereover, an array of verticalmemory switches each having at least three terminals and across-sectional area less than 6F². Each memory switch may have across-sectional area less than approximately 4F². At least one of thememory switches includes or consists essentially of a MOS transistor ora four-layer diode. At least two memory switches may share a common gatefor operating the channel of each of the memory switches.

The device may include two interleaved pluralities of bit lines forselecting a memory switch, one plurality of bit lines being connected toa first selection circuit on a first side of the array of memoryswitches and the other plurality of bit lines being connected to asecond selection circuit on a second side of the array opposing thefirst side. The device may include a first array of programmable memoryelements disposed over the array of memory switches. Each memory elementin the first array may be electrically connected to at least one of thememory switches through a conductive post. A second array ofprogrammable memory elements may be disposed over the first array. Eachmemory element in the second array may be electrically connected to atleast one of the memory switches through a conductive post. At leastone, or even each, of the memory elements in the first array may includeor consist essentially of a phase-change material, a resistive-changematerial, and/or a one-time-programmable element. Peripheral circuitryincluding or consisting essentially of a plurality of vertical MOStransistors may be electrically connected to the array of memoryswitches. F may be less than approximately 25 nm. Each vertical memoryswitch may correspond to a single bit or to a plurality of bits.

In another aspect, embodiments of the invention feature a method offorming a memory device. A substrate is provided, and a source layer isformed on the substrate. A channel layer having a doping type differentfrom the doping type of the source layer is formed over the sourcelayer. A drain layer having a doping type different from the doping typeof the channel layer is formed over the channel layer. The source,channel, and drain layers are patterned into an array of memory switcheseach having a cross-sectional area less than 6F². Patterning the source,channel, and drain layers may include forming a plurality of generallyparallel isolation trenches intersecting the source, channel, and drainlayers, depositing a dielectric material into the plurality of isolationtrenches, and planarizing the dielectric material such that the topsurface of the dielectric material is substantially coplanar with thetop surface of the drain layer. Patterning the source, channel, anddrain layers may include forming a plurality of generally parallel gatetrenches intersecting the isolation trenches, each of the memoryswitches being bounded by intersecting isolation trenches and gatetrenches. The isolation trenches and the gate trenches may besubstantially perpendicular to each other. The cross-sectional area ofeach memory switch may be less than approximately 4F².

A gate dielectric contacting the channel layer may be formed within thegate trenches, and a gate contact material may be deposited in the gatetrenches. The gate contact material may be planarized such that the topsurface of the gate contact material is substantially coplanar with thetop surface of the dielectric material in the isolation trenches. Aconductive post may be formed over a memory switch. A programmablematerial may be formed in contact with the conductive post, therebyforming a programmable memory cell. The programmable material mayinclude or consist essentially of a phase-change material, aresistive-change material, and/or a one-time-programmable material.

Forming the programmable material may include or consist essentially ofetching at least a portion of a dielectric material disposed around theconductive post to form a recess, at least substantially filling therecess with the programmable material, and planarizing the programmablematerial such that the top surface of the programmable material issubstantially coplanar with the top surface of the conductive post. Theconductive post may have a substantially quadrilateral (e.g.,rectangular or square) cross-sectional area. The programmable may bedisposed in contact with only one corner or with only two corners of theconductive post. Forming the source, channel, and drain layers each mayinclude or consist essentially of ion implantation of dopants into thesubstrate and/or deposition of a semiconductor material over thesubstrate. The source, channel, and drain layers may be patterned into aplurality of peripheral devices disposed proximate the array of memoryswitches substantially simultaneously with their patterning into thearray of memory switches. The peripheral devices may be electricallyconnected to the array of memory switches.

In yet another aspect, embodiments of the invention feature a memorydevice including a substrate defining a die, and, disposed over thesubstrate within the die, an array of vertical memory switches. Each ofthe vertical memory switches may have at least three terminals. Thearray of vertical memory switches may define a memory array of at leastone terabit. Each vertical memory switch may correspond to a single bitor to a plurality of bits. The die may have an area of approximately 1cm², and the memory array may have at least 5 terabits of storagecapacity. At least one memory switch may include or consist essentiallyof a MOS transistor and/or a four-layer diode. At least two memoryswitches may share a common gate for operating a channel of each of thememory switches.

In a further aspect, embodiments of the invention feature a memorydevice including a vertical conductor disposed over a substrate, aswitch for selecting the vertical conductor, and a plurality of layers,each layer comprising a plurality of programmable memory elements andbeing disposed over and electrically connected to the verticalconductor. The layers may be stacked vertically, and/or the verticalconductor may extend through each of the layers. The switch may includeor consist essentially of a vertical memory switch having at least threeterminals and a cross-sectional area less than 6F². At least one of theprogrammable memory elements may include or consist essentially of aphase-change material, a resistive-change material, and/or aone-time-programmable element.

In still another aspect, embodiments of the invention include memorydevices comprising a first set of parallel rows of memory cellsconnected together; a second set of parallel rows of memory cellsconnected together; and a control conductor selectable to activate atleast one of the rows of the first set and at least one of the rows ofthe second set. Selection of (i) one of the sets, and (ii) at least oneof the rows by the control conductor, causes activation of at least onerow of memory cells.

BRIEF DESCRIPTION OF THE DRAWINGS

In the drawings, like reference characters generally refer to the sameparts throughout the different views. Also, the drawings are notnecessarily to scale, emphasis instead generally being placed uponillustrating the principles of the invention. In the followingdescription, various embodiments of the present invention are describedwith reference to the following drawing, in which:

FIG. 1 is a schematic perspective view of a substrate following a firstdopant implant in accordance with various embodiments of the invention;

FIG. 2 is a schematic perspective view of the substrate of FIG. 1following a second dopant implant in accordance with various embodimentsof the invention;

FIG. 3 is a schematic perspective view of the substrate of FIGS. 1 and 2following a third dopant implant in accordance with various embodimentsof the invention;

FIG. 4 is a schematic perspective view of the substrate of FIGS. 1-3following the etching of isolation trenches in accordance with variousembodiments of the invention;

FIG. 5 is a schematic perspective view of the substrate of FIGS. 1-4following (a) filling of the isolation trenches with a body contactliner and oxide and (b) planarization in accordance with variousembodiments of the invention;

FIG. 6 is a schematic perspective view of the substrate of FIGS. 1-5following the etching of gate trenches in accordance with variousembodiments of the invention;

FIG. 7 is a schematic perspective view of the substrate of FIGS. 1-6following the growing of gate oxide in the gate trenches in accordancewith various embodiments of the invention;

FIG. 8 is a schematic perspective view of the substrate of FIGS. 1-7following filling of the gate trenches with polysilicon andplanarization in accordance with various embodiments of the invention;

FIGS. 9A, 9B, and 9C are three symbolic representations of a four layerdiode, also known as a thrystor, shockley diode, PNPN diode, or SCR;

FIG. 10 is a schematic diagram of a diode decoder for disabling all butone four layer diode device in accordance with various embodiments ofthe invention;

FIGS. 11-I, 11-II are schematic diagrams of an 8 bit×8 bit memory arrayin which row line and column line selection and memory cell enabling isperformed by a diode decoder in accordance with various embodiments ofthe invention;

FIG. 12 is a perspective view of a portion of a memory device duringfabrication following damascene formation of column lines andencapsulation with dielectric material in accordance with variousembodiments of the invention;

FIG. 13 is a side view of a portion of the memory device of FIG. 12following damascene formation of an orthogonal column gate control linein accordance with various embodiments of the invention;

FIG. 14 is a side view of a portion of the memory device of FIGS. 12 and13 following etching of two memory cell locations in accordance withvarious embodiments of the invention;

FIG. 15 is a side view of a portion of the memory device of FIGS. 12-14following N+ silicon deposition in accordance with various embodimentsof the invention;

FIG. 16 is a side view of a portion of the memory device of FIGS. 12-15following planarization in accordance with various embodiments of theinvention;

FIG. 17 is a side view of a portion of the memory device of FIGS. 12-16following P+ silicon implant in accordance with various embodiments ofthe invention;

FIG. 18 is a side view of a portion of the memory device of FIGS. 12-17following deposition of P+ silicon, N+ silicon, P+ silicon, and a topcontact in accordance with various embodiments of the invention;

FIG. 19 is a side view of a portion of the memory device of FIGS. 12-18following pillar etch formation of active memory elements in accordancewith various embodiments of the invention;

FIG. 20 is a side view of a portion of the memory device of FIGS. 12-19following a dielectric fill in accordance with various embodiments ofthe invention;

FIG. 21 is a side view of a portion of the memory device of FIGS. 12-20following dielectric planarization in accordance with variousembodiments of the invention;

FIG. 22 is a side view of a portion of the memory device of FIGS. 12-21following deposition and patterning of the top metal into row lines inaccordance with various embodiments of the invention;

FIG. 23 is a side view of a portion of the memory device of FIGS. 12-22following deposition and alternate patterning of the top metal into rowlines in accordance with various embodiments of the invention;

FIG. 24 is a side view of a portion of the memory device of FIGS. 12-23following via connection formation for a top-metal-to-bottom-metalcontact and formation of P-N junction devices for decoder diodes inaccordance with various embodiments of the invention;

FIG. 25 is a side view of a portion of the memory device of FIGS. 12-24following formation of exemplary programmable resistive-change cells inaccordance with various embodiments of the invention;

FIG. 26 is a side view of a portion of the memory device of FIGS. 12-24following formation of exemplary one-time programmable (OTP) antifusecells in accordance with various embodiments of the invention;

FIGS. 27A and 27B depict partial circuit schematics for memory elementsin a vertical third dimension according to various embodiments of thepresent invention;

FIGS. 28-65 are perspective views of memory elements being fabricatedaccording to various embodiments of the present invention at variousstages during the fabrication process;

FIGS. 66-72 are perspective views of memory elements being fabricatedaccording to various embodiments of the present invention at variousstages during the fabrication process;

FIGS. 73-78 are perspective views of memory elements being fabricatedaccording to various alternative embodiments of the present invention atvarious stages during the fabrication process; and

FIG. 79 is a perspective view of a memory device including stackedlayers of memory elements fabricated in accordance with variousembodiments of the invention.

DETAILED DESCRIPTION

Embodiments of the present invention may be fabricated using standardtechniques and equipment, and include arrays of memory switches eachhaving a “footprint” (i.e., cross-sectional area) no larger than 4F²(where F represents the minimum feature size of a particular technologygeneration). In a preferred embodiment, MOS transistors are fabricatedin a vertical orientation and have a center channel layer verticallysurrounded by a source and drain layer. The gate (that turns on thechannel) is positioned to the side of the vertically stacked device. Tofacilitate a higher packing density, the gate is preferably shared bytwo adjacent MOS devices, resulting in transistors being enabled inpairs. Final resolution of a selected memory storage element ispreferably accomplished by uniquely selecting a bit line to one of thetwo activated transistors. Various embodiments of the present inventiondo not require the highest packing density or fabrication of shared-gatetransistors, which may be desirable for formation of peripheral circuitsto support the operation of a high-density memory array.

FIG. 1 depicts a portion of a substrate 100, which may include orconsist essentially of a semiconductor material such as silicon. One ormore dopant species are introduced into substrate 100, e.g., by ionimplantation, forming a first implanted layer 110. As depicted, an areais masked prior to introducing the dopant species by, e.g.,photolithographic techniques. For fabrication of an array of memorycells, a single large-geometry mask may be used to outline the memorycells as well as the connections to the ends of the word lines (asdescribed below). First implanted layer 110 will also be referred toherein as the “source layer.”

Referring to FIGS. 2 and 3, second and third implanted layers 200, 300are formed in portions of substrate 100 by, e.g., photolithographicmasking and ion implantation of one or more dopant species as describedabove with reference to first implanted layer 110. Second implantedlayer 200 will also be referred to herein as the “channel layer,” andthird implanted layer 300 will also be referred to herein as the “drainlayer.”

As an alternative embodiment to that depicted in FIGS. 1-3, the dopantsdefining first, second, and third implanted layers 110, 200, 300 may beblanket-implanted in sequence. In such an approach, extra steps (as willbe clear to those skilled in the art) will generally be required to makethe appropriate connections to the end of the word line connections. Forexample, one may implement an etch that is timed to land within thedesired (e.g., source) layer along with insulating layer to prevent thatconnection from also contacting the middle (e.g., channel) and topmost(e.g., drain) doped layers. A suitable insulating layer may be formed byconformal dielectric deposition and etch-back as is done with a spacerformation. Additional alternatives for the formation of first, second,and third implanted layers 110, 200, 300 include epitaxial growth of thelayers with in-situ doping of the layers, thin-film deposition of dopedlayers, or any other combination of growth, deposition, and/orimplantation.

Trenches 400 are then etched into substrate 100 as depicted in FIG. 4.These trenches are for isolation, e.g., shallow trench isolation (STI),of the transistors formed along the word lines. Trenches 400 aretypically etched such that they extend through the drain layer 300, thechannel layer 200, and the source layer 110, and into the bulk ofsubstrate 100. Trenches 400 are typically formed at the finest orcritical geometry of the lithography used to maximize the packingdensity of the device being fabricated.

In a traditional lateral MOS fabrication, the channel area is generallyconnected to the semiconductor bulk of the substrate. To provide such aconnection in embodiments of the present invention, as depicted in FIG.5, a thin liner layer 500 (which may be doped similarly to the bulk ofthe substrate 100 and/or to the channel layer 200) is deposited by, forexample, chemical vapor deposition (CVD) or another generally conformalprocess, and is typically in-situ doped. However, this connection to thesubstrate bulk (liner layer 500) is optional; if omitted, fabricatedtransistors may have characteristics similar to planar thin-filmtransistors (TFT) or silicon-on-insulator (SOI) transistors. Followingthe deposition of optional liner layer 500, the trenches 400 are filledwith a dielectric material 510 (which may include or consist essentiallyof, e.g., SiO₂), and the result is polished by, e.g.,chemical-mechanical polishing (CMP), to isolate trenches 400 and toexpose the drain 300 and the ends of the word lines 520. (Omission ofthe liner layer 500 is more preferable as devices are scaled to smallerdimensions, as the number of atoms of thickness of such a liner layerrelative to the number of dopant atoms necessary to achieve a particulardoping profile may become an issue. Nonetheless, the figures depict anembodiment including liner layer 500.)

Finally, as depicted in FIG. 6, gate trenches 600 are formed by, e.g.,etching. Gate trenches 600 preferably reach the bottom of the channellayer 102 and may be over-etched slightly into the source layer 110.However, the word lines 610 in the source layer 110 should not besevered by the etch of gate trenches 600, and excessive over-etching isgenerally avoided in order to maintain low resistivity in word lines610.

A variation to either connecting the channel layer to the substrate oromitting that connection in a TFT approach is to form the gate trenchesin two steps. Specifically, in this variation, the STI trenches arefilled with dielectric (without a liner to connect to the substrate) andthe gate trenches are patterned and etched and filled in two separatesequences of steps. The first sequence of steps in forming the gatetrenches is to pattern and etch out the trenches corresponding to thealternate gate-like lines 830 and filling them with silicon (dopedgenerally to match the substrate), and thereupon connecting thesesilicon-filled, gate-like lines to the substrate. The second sequence ofsteps in forming the gate trenches is to form the gate lines asdescribed above. In this variation, during operation, the gate-likelines have no other connection.

Referring to FIGS. 7 and 8, following the etch of gate trenches 600, agate oxide 700 is grown on the exposed silicon surfaces, and theremainder of each gate trench 600 is substantially filled with gatepolysilicon 800. The substrate 100 is planarized, e.g., by CMP, toremove any gate polysilicon and any gate oxide remaining on the surfaceabove the gate trenches 600. As shown in FIG. 8, each transistor 810 inthe depicted array of transistors occupies an area equal to 2F×2F (i.e.,4F²) or less. Since laterally constructed MOS transistors typicallyrequire a footprint of at least 3F×2F (i.e., 6F²), this is a significantarea savings.

Alternatively, again referring to FIGS. 7 and 8, following the etch ofgate trenches 600, other gate dielectric materials may be deposited orgrown, in addition to or in the place of gate oxide 700, e.g., materialsderived from hafnium, aluminum, tantalum, silicon, and the like. Thesealternative gate dielectric materials may include or consist essentiallyof (but are not limited to) HfO₂, HfN, Al₂O₃, AN, TaN, Ta₂O₅, otherhigh-κ dielectrics, and the like. Furthermore, the remainder of eachgate trench 600 may be substantially filled with metal gate material orother gate material in place of or in addition to gate polysilicon 800.Such alternative gate materials may be deposited or grown by sputtering,thermal or e-beam evaporation, CVD (in its various forms), ALD, or thelike.

In an embodiment, the transistors 810 are NMOS devices (and thus, thesubstrate 100 is doped P—, the source and drain layers 110, 300 aredoped N+ and the channel layer 200 is doped P—) and (as pictured) thebottom N+ region is the source and the top N+ region is the drain. Inoperation, substrate 100 is generally at the lowest voltage (typicallyground or a small negative voltage) and all of the word lines 610 andall of the gate lines 820 are biased to a voltage v. To select a memorycell, the voltage on the word line on which the memory cell is connectedis lowered (e.g., to v−V_(th) where V_(th) is the turn-on thresholdvoltage of the transistor 810), and the gate line 820 passing next tothe memory cell is raised (e.g., to v+V_(th)). This will result in agate-to-source voltage greater than V_(th) (e.g., a voltage of about2V_(th)) being placed on the device and the two transistors on theselected word line that are also on either side of the asserted gateline may be switched on. In a preferred embodiment, the bit lines (notdepicted in FIG. 8) will exit the array on two sides; the even-numberedbit lines will exit to one side and the odd-numbered bit lines will exitto the other. In this way, only one of the two above-referencedtransistors will be active; which transistor is active is determined bywhich side of the array the active bit line comes from. The gate lines820 include every other gate line, as the gates are shared by pairs ofmemory devices. Thus, the alternate gate-like lines 830 may act asadditional isolation between device pairs and may be left floating ormay be connected to a bias voltage (e.g., equal to the substrate biasvoltage).

In one embodiment, drain 300 of the memory cell NMOS transistor 810 isconnected to a word line 610. In this way, all of the unselected wordlines (as well as the substrate 100) may be kept at ground potential. Toselect a word line 610, the voltage on that word line 610 is raised.This approach minimizes current leakage, as only one word line 610 isbiased to a voltage different from the substrate, resulting in theword-line-to-substrate junction being reverse biased (with a concomitantlow leakage current). All of the unselected word lines 610 are biased tothe same potential as the substrate and exhibit no current leakage. Thecorresponding bit line selection has the unselected bit lines biased toa small positive voltage such that the selected bit line is pulled to alower potential (e.g., ground potential or the potential of thesubstrate). If transistors 810 are PMOS transistors, the above voltagepolarities may simply be reversed to achieve the same result.

Embodiments of the present invention include conductive strappingfeatures that help to compensate for the series resistance of bit linesand/or word lines in order to provide greater current at a given memorycell while requiring lower supply voltages. To add strapping to reducethe resistance of the word lines, word line contacts 520 may beintermittently placed along the length of the word lines 610 (e.g.,every 16 or 32 or 64 memory cells or the like) and then connected to ametal word line conductor running above and parallel to each word line610. In this manner, the resistivity of the doped silicon word line 610is offset by a parallel, more conductive metal word line and only ashort resistive segment (from the closest strapping connection betweenthe doped word line 610 and the parallel metal word line to the targetedmemory cell) is on the conduction path. Similarly, strapping may beadded to the gate lines. The strapping preferably does not interferewith the positioning of the storage elements and the bit lines. Sincethe bit lines run parallel with the gate lines, the gate line strappingmay be placed below the bit lines; however, the word line strapping isstill preferably located above the memory elements and the bit lines (toavoid colliding with the storage elements that connect between the bitlines and the tops of the transistors 810). The spacing on either sideof the word line strapping contact vias may optionally be sized largerthan the critical geometry along the direction of the word line 610without a significant loss of array density. The gate line strapping mayoptionally be formed directly on the gate line poly, thus eliminatingthe need for the drop-down connections, and the gate-line material mayinclude or consist essentially of a higher conductive material such asmetal and/or be made taller.

Peripheral circuits including vertical MOS transistors may be fabricatedsimultaneously with the vertical transistors of the storage cells. Byfabricating these peripheral transistors at substantially the same timeas the storage cell transistors 810, a lower manufacturing cost may beachieved. These peripheral transistors may also be wired together toachieve additional electrical properties such as higher current passingability, greater capacitance, or the like. The peripheral transistorsmay also be laid-out with a larger area for wider transistor channelsfor higher current carrying capacity. Two or more transistors in seriesmay equate the performance of a higher voltage transistor by acting as avoltage divider and sharing the voltage drop across them. The channellength of such transistors is determined by the thickness of the channellayer 200.

An alternate embodiment of the present invention, as suggested above,excludes the sequence of masking and implanting in favor of creating aninitial substrate having the requisite layers of doped materials (thatdefine layers 110, 200, 300) through blanket techniques. For example,these layers may be formed by epitaxial deposition. Once the layers aredeposited, the STI trenching and other subsequent etches may beperformed with the inclusion of additional steps for creating contacts520 to the layer 110. This may be accomplished by etching openings to adepth where layer 110 is exposed at those locations where contacts 520are desired; these openings may then be filled with conductive material,such as heavily doped semiconductor material (doped to the same type, Nor P, as the layer to be contacted) or metal (optionally withappropriate surface doping to make the contact ohmic). In a furthervariation, areas of the substrate 100 may be etched and then refilledutilizing epitaxial deposition. In this case, the deposited layers maybe doped differently in certain areas in order to enable the fabricationof different device types on a single substrate (e.g., vertical NMOSplus vertical P-i-N diodes or vertical PMOS and vertical NMOS). Thelayers may be formed by implantation and/or epitaxy. Once the areas oflayered doping are created, if the bottom conductive layers 110 are atthe same depth for two or more areas, those areas may be processed inparallel (i.e., the orthogonal trenches etched and filled with STIand/or gate poly). If a combination of vertical MOS and diodes iscreated, the “gate” material on both sides of the diodes may be biasedto a set voltage that enables normal diode operation.

Alternative Switching Devices

Various embodiments of the present invention utilize switching devicesdifferent from the vertical MOS transistors described above. One exampleis the threshold triggered device, such as the four-layer diodesdescribed in U.S. Pat. No. 7,376,008, the entire disclosure of which isincorporated herein by reference. FIG. 9 illustrates three symbolicrepresentations of a four-layer diode, also known as a thrystor,shockley diode, PNPN diode, or SCR. FIG. 9A illustrates thetwin-bipolar-transistor model that may be utilized to describecharacteristics of the devices utilized in embodiments of the presentinvention. In this model, a positive voltage (such as Vpp) is applied tothe PNP transistor's emitter A and a lower voltage is applied to the NPNtransistor's emitter C. In a two-terminal device (i.e., if terminal B isignored for a moment), by raising the positive voltage, leakage currentthrough the PNP transistor's collector to the base of the NPN transistorcauses the NPN to begin to turn on. This starts to turn on the PNPtransistor, forming a positive feedback loop that eventually causes thefull device to avalanche and switch on. If a negative voltage (or avoltage lower than that which would occur at point B in a two-terminalversion of the device) is applied to terminal B, the leakage currentthat causes avalanche is drawn away from the NPN transistor's base andmakes avalanche more difficult (a greater positive voltage may berequired at terminal A). However, if the voltage at point B is raised,this helps to turn on the NPN transistor and makes avalanche easier (alesser positive voltage may be required at terminal A). FIG. 9Billustrates a generalized silicon device structure, and FIG. 9Cillustrates the schematic symbol of the device. Other switching typedevices may also be utilized in embodiments of the present invention.

FIG. 10 depicts a simplified diode-decoded, four-layer-diode switchselector. A fully decoded diode decoder has as inputs N complementaryaddress pairs to decode one out of 2N lines. In a fully decoded diodedecoder, every line to be decoded is typically connected to everyaddress pair (either to the address line or the address complement line,but not both) by a diode. All of the decoding diodes generally face inthe same direction, i.e., every address line will be connected to eitherthe anodes or the cathodes. The complementary address pair lines areused to disable a given line in the collection of lines to be decodedand thus, a diode is present in the decoder between every complementaryaddress pair line and every line in the collection of lines to whichthat address line does not correspond. That is, if each of thecollection of lines is uniquely numbered with one of the decodedaddresses between 0 and (2N−1) inclusive, and if that unique number iswritten as a binary number showing both the address bit and itscomplement, the binary address pattern corresponding to that line willreveal the pattern of diodes to be connected between it and thecomplementary address lines. If the cathodes of the diodes are connectedto the address lines, each one bit represents a diode. For example, ifthe first line in FIG. 10 is line 0, the bits corresponding to thisaddress, showing both the address and complement bits in the same orderas the address lines are ordered, are 0101 (corresponding to A2, A2, A1,and A1), and the diode pattern is no-diode, diode, no-diode, diode asshown in FIG. 10. The diode decoder illustrated in FIG. 10 pulls alllines to a low voltage except for the one being addressed. By reversingthe direction of the diodes in the decoding array, one may alternativelypull all but one line to a high voltage for connecting to the base ofthe NPN transistor (i.e., the other internal layer of the four-layerdiode) to achieve a similar effect. With either approach, the four-layerdiodes may be used as the line drivers to an array. One line driver maybe made to be more easily switched (while the rest are less easilyswitched) by applying a control voltage to the middle layer of the otherfour-layer diodes, making them less easily switched. Switching may alsobe controlled by adding a capacitively coupled trigger input. Such aninput may be held low with the addresses being applied and then broughthigh to impose a pulse of current to each control gate line to the linedrivers. Then, since all but one line is being held low through thediode-decoder array, only one control gate experiences a pulse ofcurrent and is triggered to its on state. As described below,embodiments of the present invention include a method for fabricatingboth the diodes of the decoders and the four-layer diodes in a unifiedprocess.

Various embodiments of the invention include programmable materials suchas phase-change materials or resistive-change materials that changetheir programmed state by applying a voltage across that material (or,correspondingly, by causing a current of a given magnitude and durationto pass therethrough). In embodiments in which threshold devices such asfour-layer diodes are utilized in a memory array including suchmaterials, care is taken to ensure that the voltages across thefour-layer diodes is not placed across the programmable material whenthose devices switch (thereby causing the voltage across those devicesto drop). FIG. 10 includes an additional input TRIG for triggering theswitching of the device. The TRIG input is used to capacitively couple(as depicted, through capacitors, but reverse biased diodes may beutilized) a positive pulse of current to the B terminal of thefour-layer device to cause it to avalanche without placing a largevoltage across the outer terminals of the device (that might bemomentarily placed across the programmable material at the time ofavalanche). Only one four-layer device is switched on as a function ofthe complementary address inputs and the layout of the diode decoder,because the diode decoder ensures that every line but one will have apath through a diode in the decoder to a low voltage address input. Thispath will dissipate the capacitively coupled trigger pulse to all butthe one device without a diode path to a low voltage through the diodedecoder. In this manner, the desired voltage to be placed across thememory cell may be applied to Vpp (taking into account any circuitvoltage drops) without having to elevate that voltage to causetriggering. Furthermore, since memory-cell reading is typically donewith a low voltage and writing is done with a higher voltage, a targetedmemory cell should be avalanched by a lower voltage when reading and anon-targeted memory cell should not be inadvertently avalanched by thehigher voltages used during writing. In embodiments of the presentinvention, the desired voltage for reading or writing (or, in the caseof some programmable materials, a third voltage for erasing) is appliedto Vpp (taking into account any circuit voltage drops) and then theseparate triggering input TRIG switches on the selected four-layerdevice.

FIG. 11 illustrates a schematic diagram of a simplified memory array1100 in accordance with various embodiments of the invention for ease ofexplanation (in practice, arrays of much greater capacity areanticipated). In FIG. 11, the four-layer devices have been drawn usingthe bipolar equivalent circuit of FIG. 9A, but the devices are generallyconstructed as illustrated in FIG. 9B. FIG. 11 is drawn with the rowdecoders 1110 split with the even rows being driven from the left sideof array 1100 and the odd rows driven from the right side. The columnsare drawn as being all driven from the bottom of array 1100 in order toillustrate that both divided and non-divided decoders may be utilizedfor the rows and/or the columns. The row diode decoders 1110 areduplicated on both sides of array 1100 (except for A0 on the left and A0on the right), and the column diode decoder 1120 is drawn below thecolumn drivers at the bottom of the figure. Unlike previous designs, theswitching control inputs for every pair of lines are tied together. Thedecoder 1130 for the memory cell gate control signal is drawn betweenthe array 1100 and the right-side row drivers 1110 (the rows are decodedand driven in pairs of rows). A single row is selected by activating thegates of the memory cells in a given pair of rows, and resolving to asingle memory cell as the intersection of the pair of rows triggered (bythe gate pulse to the pair of rows), with the driven row (driven fromeither the left or right side), and the driven column. In operation, thecomplementary address pairs are asserted (where an address bit is eitherpulled low for a 0 input or floating for a 1 bit) along with the TRIGinput being held low. The Vpp level is applied, and the TRIG input istransitioned from low to high in order to induce a capacitively coupledvoltage spike to the decoder line connected to each corresponding gateterminal of the four-layer devices (e.g., their B inputs). The TRIGinputs are typically designed to be on the far side of the diode decoderfrom the four-layer device, but this is only a consideration for tightgeometries where the transmission of the trigger signal may propagate tothe B terminal input before being fully dissipated by the low addressinputs. Only the capacitively coupled spike on the single line without adiode connected to a low address input will reach and trigger itsrespective four-layer device. This will turn on the row driver, columndriver, and memory cell at generally the same time. During a readoperation, the low Vpp voltage results in a current through the array1100 that will be sensed with a Read Sense circuit in the current path(depicted at the top of array 1100 on the row driving circuits 1110, butmay be at the bottom of array 1100 at the column driving circuits 1120).During an erase or program operation, the read sense is generallyignored or switched off, and writing or erasing is controlled by thelevel, duration, and waveform of the Vpp voltage. Three-dimensionalstacking of arrays 1100 may be accomplished as described in U.S. Pat.No. 6,956,757 (the entire disclosure of which is incorporated byreference herein), where a relatively small number of signals (typicallycomplementary address signals, Vpp, TRIG and Read Sense) are connectedvertically, layer to layer.

Manufacture of the array 1100 may be accomplished with standardsemiconductor-processing techniques. Referring to FIG. 12, a substrate1200 has within it bottom metal conductors 1210. Bottom metal conductors1210 may be fabricated by, e.g., a metal damascene process, althoughpattern-and-etch techniques may also be utilized. These conductor lines1210 will typically correspond to the column lines (sometimes called bitlines) and connect to the cathode ends of the active memory celldevices. Typically, for a high-density memory device, bottom metalconductors 1210 are fabricated at the critical dimension F (alsoreferred to as the memory half-pitch). The center-to-center distancefrom one such line to the next is 2×F, or 2F. Typically, for a singlebit per cell memory cell, the highest density is 2F×2F, or 4F².Following the formation of bottom metal conductors 1210, a layer 1220 ofdielectric or non-conductive material is deposited. In accordance withvarious embodiments of the invention, F may be approximately 250 nm orless, approximately 180 nm or less, approximately 130 nm or less,approximately 90 nm or less, approximately 65 nm or less, approximately45 nm or less, or even approximately 25 nm or less.

Referring to FIG. 13, middle electrode conductor line 1300 is formedwithin layer 1220 by, e.g., a damascene process. In the depictedembodiment, middle electrode conductor line 1300 is orthogonal to bottommetal conductor line 1210. As discussed below, other designs and layoutsmay also be utilized.

As shown in FIG. 14, holes 1400 corresponding to the active element ofthe individual memory cells to be fabricated (two are depicted here) arepatterned and etched. The pattern may be made with two features that areeach 1F² or with a single feature centered about metal line 1300 that is3F×1F (in which case the middle electrode conductor line 1300 metalprotects the area between holes 1400 from being etched).

Referring to FIG. 15, N+silicon 1500 is blanket-deposited to at leastsubstantially fill the etched holes 1400. Silicon 1500 may bepolycrystalline if deposited on a bottom conductor 1300 including orconsisting essentially of metal. However, bottom conductor 1300 mayalternatively be made of doped silicon and substantially all of silicon1500 may be single crystalline. In an embodiment, silicon 1500 isdeposited in a selective epitaxial process in which silicon 1500 growsfrom the silicon surfaces exposed in the bottoms of the holes 1400.Silicon 1500 is planarized (e.g., by CMP) as shown in FIG. 16. A smallamount of overpolishing of silicon 1500, conductive line 1300, and layer1220 (where exposed to the surface) is performed in some embodiments toensure a substantially planar surface.

As shown in FIG. 17, a P+ implant is used to change the doping of theupper portion of deposited silicon 1500, thus forming P+silicon 1700.The lower boundary of P+silicon 1700 is below the bottom edge of middleelectrode conductor line 1300 such that middle electrode conductor line1300 contacts P+silicon 1700 but not N+ silicon 1500 (or the junctionbetween P+silicon 1700 and N+ silicon 1500). In another embodiment,silicon 1500 and silicon 1700 are epitaxially deposited using in-situdoping of the appropriate type.

Referring now to FIG. 18, layers of doped silicon and a top contact areformed. First a P+silicon layer 1800 is deposited, followed bydeposition of an N+ silicon layer 1810. The P+ layer 1800 extends thethickness of P+silicon layer 1700 such that middle electrode conductorline 1300 contacts P+silicon 1700 but not N+ silicon 1810 (or thejunction between P+silicon 1700 and N+ silicon 1810). A P+silicon layer1820 and a top contact 1830 are formed above N+ silicon 1810. Theabove-described layer formations may be more complex and may furthercomprise intervening layers of intrinsic silicon as is understood tothose skilled in the art. Such layers may be deposited with a selectiveepitaxial growth process, particularly if silicon 1500 is deposited witha selective epitaxial growth process. Epitaxial growth will limitleakage currents that could result in the false triggering of, or alowered switching threshold for, the pillar device 1900 when it is anavalanching device such as an SCR, a four-layer diode, a gatedfour-layer diode, or the like. In various embodiments, theabove-described layers include or consist essentially of materials otherthan silicon, e.g., other type-IV semiconductor materials, III-Vsemiconductor materials, or even polymeric or organic semiconductors.

As illustrated in FIG. 19, the layers are patterned and etched intoindividual pillars 1900, each pillar 1900 forming the active switch of amemory cell. Each pillar 1900 is generally of the size 1F². With aspacing to the left and right of each pillar 1900 being approximately1F, and with a spacing (not shown) in front and in back of each pillar1900 also being approximately 1F, the memory cell has a footprint ofapproximately 4F². It should be noted that the top contacts 1830 mayinclude or consist essentially of materials and/or structures toimplement programmable capability as will be described below, but forsimplicity, are shown only as a simple conductive material here. Asshown in FIG. 20, pillars 1900 are then surrounded with a dielectric ornon-conductive material 2000 that is subsequently planarized to exposecontacts 1830 to the top of each memory cell (as shown in FIG. 21).

The process described above produces multiple twin columns of memorycells where each pair of memory cells shares a single conductor lineconnecting to bottom conductor 1300 (i.e., the middle electrode of eachmemory cell). When this conductor line is energized, all memory deviceson either side of that conductor line may be activated together, and asingle cell is identified by the signals selecting (i.e., asserting witha low voltage) a single row passing below the cells (thereby reducingthe number of potentially activated cells to two at the intersection ofthe one active row with the twin columns of memory cells) and selecting(i.e., asserting with a high voltage) a single column passing above thecells.

Referring to FIG. 22, top column conductor lines 2200 that run inparallel with middle electrode conductor line 1300 and orthogonal tobottom metal conductor line 1210 are fabricated. One of these two topcolumn conductor lines 2200 is energized (with a high voltage) touniquely select a single memory cell. All other top column conductorlines (not shown) have little or no impact on circuit operation as thememory cells associated with those other top conductors are disabled bya low voltage on their middle electrode conductor lines.

For this reason, as shown in FIG. 23, as an alternative to top conductorlines 2200, top conductors 2300 may be fabricated. Top conductors 2300each contact the tops of two columns of memory cells. As long as the twocontacted columns include cells from two different twin-cell columns(i.e., two columns not both contacted by the same conductor 1300therebetween), a column of memory cells may be uniquely identified asbeing the intersection of two rows of memory cells having a commonmiddle electrode conductor line 1300 and two rows of memory cells havinga common top conductor 2300. A memory cell from this uniquely selectedcolumn of memory cells is identified by the selection of a singleorthogonal row 1210 passing below it. An additional benefit of thisstructure is that the resistance along the length of “triple-wide” topconductor 2300 is approximately one-third that of “single-width” topconductors 2200. As a result, the voltage drop thereacross is alsoreduced by approximately one third, enabling use of smaller supplyvoltages. An embodiment of the invention implements a similartriple-wide conductor as the bottom conductor (i.e., the two conductorsto the same side of a gate line) and a column of memory cells may beuniquely identified as being the intersection of two rows of memorycells having a common middle electrode conductor line 1300 and two rowsof memory cells having a common bottom conductor. This may beimplemented in the conductive line in the substrate or in the parallelconductive strapping lines described above.

As an alternative to triple-wide top conductors 2300, single-width topconductors 2200 may be implemented so that all of the even-numbered topconductors are wired together an exit to one side of the array, and allof the odd-numbered top conductors are wired together and exit the arrayto the opposite side. In this implementation, each control conductor(i.e., gate line) turns on one row of even-numbered transistors and onerow of odd-numbered transistors. Selecting either all of theeven-numbered top conductors or all of the odd-numbered top conductorsresults in the selection of a single row of memory cells (i.e., theintersection of one even-numbered row and one odd-numbered row selectedby the gate conductor with either the even-numbered top conductors orthe odd-numbered top conductors). A similar alternative implementationcan be achieved by tying together all the even-numbered gate conductorsand all of the odd-numbered gate conductors and selecting a singletriple-wide top conductor 2300, which also results in a single rowselection. Other smaller groupings comprising fewer than half of all theconductors (e.g., fewer than all the even-numbered or odd-numberedconductors) as well as other groupings of gate conductors and topconductors can be employed. The bottom conductors can be brought intosuch groupings as well. In some implementations, such as when multiplememory cells are accessed at once, the resulting intersection caninvolve selection of more than one row.

As shown in FIG. 24, vertical via connections 2400, 2410 are formed.These via connections are formed by patterning holes and then fillingthe holes with conductive material (e.g., a metal). The via formation isgenerally performed just before the top metal conductors 2200 or 2300are formed. It should be noted that via 2410 passes through layers ofsilicon 1800, 1810, 1820 (patterned, in this instance, to the side oflower silicon layers 1500, 1700) and will typically short circuit thoselayers together.

This structure enables via conductor 2410 to make an electricalconnection to layer 1800, in particular, and through it a connection tolayer 1700. Layer 1700 forms a P-N junction with layer 1500 beforecontacting the bottom conductor 1210. Thus, via 2410 enables thefabrication of P-N junction devices simultaneously with the formation ofthree-terminal P-N-P-N devices. Alternatively, the device shown on theleft side of FIG. 24 may be used as a P-N junction device if its topconnection is unused. As shown, the P-N junction device on the rightside of FIG. 24 is connected to a three-terminal P-N-P-N device on theleft side, thus corresponding to a portion of the circuit shown in FIG.11. These techniques may also be used to wire peripheral circuits thatinclude or consist essentially of vertical MOS transistors.

Many variants of the present invention will be apparent to one skilledin the art in light of the present teaching, such as implementation onthe column lines (rather than, or in addition to on the row lines),decoders other than diode decoders, use with fuses instead of antifuses,and use with other reprogrammable devices (such as phase-change materialdevices, resistive material devices, one-time programmable (OTP)devices, and Flash-like floating gate devices, etc.) instead ofantifuses. Furthermore, for three-dimensional memory array variants, thedisabled line may be in the third dimension (i.e., in the directionorthogonal to the rows and columns) or may disable the selection of oneout of many subtiles. The switching device in the memory cell may be agated P-N-P-N device, or as one skilled in the art will readilyrecognize by omitting the top P+deposition step, may be an N-P-N bipolartransistor device. Using the techniques described herein to fabricateother devices such as P-N junction devices, N-P-N-P devices, P-N-Pdevices, FET devices, J-FET devices and unijunction transistors will allbe apparent in light of the present teaching. Note that in the case ofan FET-type device, middle conductor layer 1300 is constructed as a pairof layers where the first (lower) layer is a conductive layer and thesecond (upper) layer is a dielectric layer. Before depositing thesilicon in the hole, a thin dielectric layer is either conformallydeposited or grown and then etched back (as is often done for aside-wall spacer structure) to form the gate oxide; these extra featureswrap the middle conductor with an insulating layer. The switchingdevices may be constructed with one middle contact in addition to thetop and bottom contacts, or with two or more middle contacts. Devicesmay be constructed as a part of an array or may be designed andmanufactured to stand alone or as portions of peripheral circuits.

Referring back to FIG. 22, an embodiment of the present inventionfeatures top column conductor lines 2200 running in parallel with middleelectrode conductor line 1300 and orthogonal to bottom metal conductorline 1210. One of the two top column conductor lines 2200 is energized(with a high voltage) to uniquely select a single memory cell. In analternative embodiment, top column conductor lines 2200 run in parallelwith bottom metal conductor line 1210 and orthogonal to middle electrodeconductor line 1300. In such a variant, one of the two bottom metalconductor lines 1210 is energized (with a low voltage) to uniquelyselect a single memory cell.

Embodiments of the present invention may feature memory cell deviceshaving multiple middle connections. For example, from the point in theprocess shown in FIG. 17, a layer of dielectric or non-conductivematerial may be deposited and then patterned. Into such a layer, anadditional middle conductor may be formed with a damascene process(resulting in a layer on top of that shown in FIG. 17 looking like theupper half of FIG. 13). This second, upper middle electrode conductorline may be parallel to or orthogonal to the first, lower middleelectrode conductor line 1300. The ends of the two middle conductorlines may be staggered to enable via connections to be made to both. Theprocess continues by etching holes at each memory cell and filling withP+silicon (to merge with the P+ shown in FIG. 17) and planarizing. Animplant may be made to change the doping of the P+silicon to N-type(driving it deep enough to reach just below the bottom edge of thesecond, upper middle conductor line, but not so deep as to reach the topof first, lower middle electrode conductor line 1300). Finally, N+silicon is deposited to extend the N-type silicon above the second,upper middle conductor line, followed by a layer of P+silicon 1820 andtop contact material 1830. The middle contacts and the junctions betweenN+ and P+silicon layers are preferably not in contact with each other.Processing then resumes at the point shown in FIG. 18, now allowing forvia connections to more than one middle conductor. One skilled in theart will recognize this technique may be repeated for more middleconductors than the two described here. Another variation includesformation of the circuit of FIG. 11 with gated field emitters replacingthe three-terminal, four-layer devices and simple two-terminal (ungated)field emitters replacing the decoder diodes.

Programmable Elements

Following the formation of memory cells having vertically constructedswitching elements (e.g., the MOS transistors in FIG. 8 or the voltagethreshold switching devices in FIG. 21), each of the array of memory hasan exposed top contact. This facilitates the formation of any of severaltypes of programmable elements on top of one or more cells prior to theformation of the top conductors.

FIG. 25 depicts an embodiment of the present invention incorporating aprogrammable material 2500. Such a structure is described in U.S. patentapplication Ser. No. 12/643,278, filed on Dec. 21, 2009, the entiredisclosure of which is incorporated by reference herein. Programmablematerial 2500 (e.g., a resistive-change or phase-change material) may beformed by a sidewall spacer technique, and may be disposed between thetop contact of the memory cell and the top conductor (an insulatingdielectric layer disposed below the top conductor prevents current frombypassing material 2500).

FIG. 26 shows an embodiment of the present invention that incorporatesan OTP material 2600. This programmable structure includes a thindielectric antifuse layer 2600 between the top contact of the memorycell and the top conductor. Antifuse layer-based memory cells are wellunderstood by those skilled in the art.

Regardless of the type of memory cell switching device utilized and themethod of its formation, a surface substantially similar to thatdepicted in FIG. 28 may be achieved above the switches (as describedbelow).

Self-Aligned Programmable Element Contacts

Embodiments of the present invention include memory-cell arrays havingactive devices disposed below the memory cells (e.g., in the underlyingsubstrate or in another layer of circuitry). The active devices (e.g.,diodes, transistors, and/or thyristors) are each shared by multipleprogrammable elements. The memory-cell array may have multiple stackedlayers of memory cells. In various embodiments, the memory-cell layerincludes a portion of the active device. For example, it may includebase and emitter portions of transistors that cooperate with previouslyfabricated collector portions therebelow. FIG. 27A shows a partialschematic in which the columns of an array 2700 are drawn as threecolumn lines to each of which a vertical connection is made through amemory cell switch 2710 (each depicted as a diode). Above each switch2710, a post connects to multiple layers of row lines (here four aredepicted) each controlled by a FET 2720. At each intersection of a rowline with a post is a programmable memory element 2730. Eachprogrammable memory element 2730 may be a phase-change element (e.g.,one including or consisting essentially of a chalcogenide material suchas a germanium-antimony-tellurium alloy (GST)), a resistive-changeelement, an organic programmable element, a nano-material element, anOTP element (such as a fuse or an antifuse), a factory programmed link,or some other information storing element. FETs 2720 are typically beformed in a substrate with higher-temperature processing, but this isnot a requirement, and these row-selection switching devices may be putin each layer of memory cells. Memory cell switches 2710 may be any of anumber of devices formed in a base (e.g., substrate) layer, e.g.,diodes, transistors, thristors, and the like. The control gate of eachFET 2720 is selected by address circuitry that determines which row lineor lines in which layer or layers is selected at any particular time.

FIG. 27B shows array 2700 in three dimensions; three rows in each offour layers are shown above three columns of a diode array. Selection ofan individual memory storage element is accomplished by selection of acolumn (by way of column address decode circuitry, not shown but wellunderstood by those skilled in the art) and one or more row FETs 2720(by way of row address decode circuitry, not shown in the figure butwell understood by those skilled in the art). As mentioned above,devices other than diodes 2710 may be utilized at the base of the posts,e.g., switching devices such as transistors (an individual post may beselected through address decode circuitry such that a single post isactivated as opposed to a column of devices). Furthermore, circuitry todetect current flowing through an addressed or selected path from one ormore rows to a column may be implemented in embodiments of the presentinvention. For example, each set of row-selection FETs 2720 in a givenlayer may pass through a sense amplifier that senses the amount ofcurrent flowing into the FETs 2720 of a given layer and therebydetermine the information stored in the selected bit within that layer.In various embodiments, one or more layers (or even all layers) may beactive simultaneously and sensed to read a bit therefrom. The layer(s)may be active simultaneously and programmed to write a bit into thelayer(s) simultaneously. The programmable elements 2730 may exhibit morethan two bit states and therefore each store more than one bit ofinformation.

FIG. 28 depicts a perspective view of a portion of a starting surface2800. Surface 2800 may be a base layer above an array of memory cellsincluding vertical switches (or of other orientations) or may be aportion of one or more layers of programmable memory elements accordingto embodiments of the present invention. Contacts 2810 to individualmemory cells are disposed on surface 2800, as are contacts 2820connecting the substrate and individual row lines. Contacts 2810, 2820may include or consist essentially of one or more conductive materials(e.g., a metal). As depicted in FIG. 28, contacts 2810, 2820 are metalsurrounded by a thin layer of material that promotes adhesion of themetal to surrounding non-conductive substrate material 2830.

In FIG. 29, a layer of non-conductive material 2900 (e.g., a dielectricsuch as silicon dioxide) has been deposited over surface 2800. Asdescribed below, one or more layers of programmable memory elements areformed in layer 2900 in accordance with various embodiments of theinvention.

Referring to FIGS. 30-33, photoresist 3000 is deposited over layer 2900.A pattern of row lines 3100 is exposed in photoresist 3000 and thendeveloped to form openings 3200 corresponding to row lines to befabricated as described below. Material 2900 is exposed by openings 3200and is subsequently etched to form row trenches 3300.

As shown in FIG. 34, after formation of row trenches 3300, the remainingphotoresist 3000 is removed. With reference to FIGS. 35 and 36, a spacerlayer 3500 including or consisting essentially of a non-conductivematerial (e.g., a dielectric such as silicon nitride) is conformallydeposited and then directionally etched back (e.g., by reactive-ionetching (RIE)), thus removing spacer layer 3500 on the top surface andin the bottom of the trenches 3300 while leaving spacer layer 3500 onthe sidewalls of the row trenches 3300. As shown in FIG. 37, a thinbarrier layer 3700 is conformally deposited in row trenches 3300.Barrier layer 3700 promotes adhesion to and may substantially preventinterdiffusion between spacer layer 3500 and subsequently depositedlayers. As shown in FIG. 38, conductive material 3800 is then depositedwithin row trenches 3300. Conductive material 3800 may include orconsist essentially of, e.g., a metal such as copper, tungsten,molybdenum, aluminum, and/or a noble metal. Afterwards, as shown in FIG.39, a planarization step is performed (e.g., by chemical-mechanicalpolishing), forming the conductive row lines 3900. Row lines 3900 mayinclude regions of conductive material 3800 surrounded by barrier layer3700 spacer layer 3500.

Referring now to FIGS. 40-42, a layer of photoresist 4000 is depositedover row lines 3900. Photoresist 4000 is exposed, defining a pattern ofcolumn lines 4100 and end-of-row connectors 4110. Photoresist 4000 isthen developed, forming openings 4200 corresponding to the spacesbetween column lines 4100 and opening 4210 between end-of-row connectors4110. Through these openings, the materials underlying photoresist 4000are revealed.

As shown in FIG. 43, a selective dielectric etch is performed by, forexample, reactive ion etching (RIE). This etch removes exposed portionsof layer 2900 and spacer layer 3500 but does not significantly removeany of the exposed conductive (e.g., metal) materials. The etchselectivity is preferably such that the spacer layer 3500 is etcheddeeper than the non-conductive bulk material (i.e., layer 2900). Forexample, an etch tailored for nitride materials may remove siliconnitride faster than silicon oxide (at a ratio of 2:1 to 3:1). Followingthis etch, remaining portions of photoresist 4000 are stripped away(FIG. 44) and a conductive masking material 4500 (e.g., a metal such astungsten) is deposited (FIG. 45). As shown in FIG. 46, conductive mask4500 is planarized and remains only in the etched areas shown in FIG.44, thus forming an etch-resistant pattern for protection of the spacesbetween the column lines 4100 and between the end-of-row connectors 4110(the rows are also made of an etch-resistant material such as metal).

Referring to FIG. 47, another dielectric etch like that described abovewith reference to FIG. 43 is performed. The etch likewise exposedportions of layer 2900 and spacer layer 3500 but does not significantlyremove any of the exposed conductive (e.g., metal) materials. Asdescribed above, spacer layer 3500 is etched deeper than thenon-conductive bulk material (i.e., layer 2900). However, depth of theetch for both materials is less than the corresponding etch depth forthe first etch of FIG. 43 (this is described further in conjunction withFIG. 55).

As shown in FIGS. 48-50, a second conductive mask layer 4500 ofconductive material (e.g., metal such as tungsten) is deposited andpolished back (e.g., by CMP) in a damascene-like process. Thenon-conductive spacer layer 3500 is protected by metal in both thespaces between the column lines 4100 as well as the areas of the columnlines 4100 themselves; the only areas not now protected by a metalmasking material are those areas corresponding to the vertical viaconnection points of the memory cells 4900 and the vertical end-of-rowconnection vias 4910. All of these vertical via connections are thenopened by etching (i.e., using the metal surface patterns as an etchmask), thus opening contacts 2810 to the individual memory cells as wellas the contacts 2820 connecting the substrate to the individual rowlines.

As shown in FIGS. 51 and 52, a thin spacer layer 5100 of non-conductivematerial (e.g., a dielectric such as silicon dioxide) is conformallydeposited and then directionally etched back (e.g., by RIE). The etchremoves the material on the surface and in the bottom of the via pitswhile leaving the non-conductive material on the sidewalls of the viapits. The etch of FIG. 51 and the spacer formation of FIG. 52 enable thesubsequent formation (as described below) of self-aligned postspositioned between two adjacent row lines spaced apart by a singlecritical dimension F without contacting either row line.

Referring now to FIG. 53, a thin barrier layer 5300 is conformallydeposited. Barrier layer 5300 promotes adhesion to and may substantiallyprevent interdiffusion between spacer layer 5100 and subsequentlydeposited layers. As shown in FIG. 54, conductive material 5400 is thendeposited over barrier layer 5300. Conductive material 5400 may includeor consist essentially of, e.g., a metal such as copper, tungsten,molybdenum, aluminum, and/or a noble metal. Afterwards, as shown in FIG.55, a planarization step is performed (e.g., by CMP), forming verticalvia posts 5500 to individual memory cells and end-of-row posts 5510.Posts 5500, 5510 feature conductive material 5400 surrounded by barrierlayer 5300 and spacer layer 5100.

FIGS. 56-62 depict the formation of conductive links that electricallyconnect the vertical end-of-row connection posts 5510 to the ends of theindividual row lines 3900 (depicted in FIG. 39). A layer of photoresist5600 is deposited (FIG. 56) and then exposed, preferably using anon-critical geometry mask (FIG. 57). Photoresist 5600 is then developed(FIG. 58) to reveal the areas where the ends of the row lines 3900 andthe end-of-row vertical connections are located. Only the spacers aroundthe end-of-row connectors (made of non-conductive material, i.e., spacerlayer 5100) and the spacers around the rows (also made of non-conductivematerial, i.e., spacer layer 3500) are exposed (i.e., not covered bymetal masking material and/or photoresist) and etchable at this point inthe process. These spacers are then etched (FIG. 59), forming trenches5900. Trenches 5900 are preferably deep enough so they will not bepolished away during subsequent polishing steps (corresponding to FIG.65 described below). As shown in FIG. 60, remaining portions ofphotoresist 5600 are then removed. Trenches 5900 are then filled with aconductive material 6100, as shown in FIG. 61. Conductive material 6100may include or consist essentially of a metal, e.g., tungsten. As shownin FIG. 62, conductive material 6100 is then polished in adamascene-like polishing step.

FIGS. 63-65 depict the addition of programmable material to the circuitand the removal of the conductive masking structures. First, spacermaterial 3500 and layer 2900 surrounding the conductive vertical viaconnection posts of the memory cells is etched back utilizing a timedetch (e.g., RIE) to form a cup around the posts. A programmable material6400 is then deposited over the surface, filling in the etched areas. Apolishing step (by, e.g., CMP) is then performed, removing portions ofprogrammable material 6400 not in the etched areas. The polishing stepcontinues until substantially all of the conductive masking materialsare also removed from the surface. Only the metal around the end-of-rowvertical connectors (that supplanted the spacer material) and the metalalong the sides of the rows (that also supplanted the row spacermaterial) remain at this point. The conductive material between thecolumns and along the rows will remain because it was formed in theopenings created by etching the spacer material around the rows deeply.The thickness of the remaining conductive material is a function of thedepth of that etch. The end-of-row vertical connectors are connected tothe ends of the rows by metal remaining as a result of a deep etch ofthe spacer material around the end-of-row vertical connectors as well.

In an embodiment, the cups are lined with a thin antifuse material andthen filled with conductive material rather than with programmablematerial 6400, thus forming one-time programmable memory cells. Duringprogramming, the conductive material forms a filament through theantifuse material, thus forming an electrical connection.

At the point of the process depicted in FIG. 65, contact points are onceagain present on the surface of the substrate in a pattern similar tothat at the start of the process (shown in FIG. 28). It should be notedthat the processing steps utilized herein are generally low-temperatureprocessing steps that may be performed at or near room temperature or attemperatures only slightly above room temperature. Typically, nohigh-temperature anneal, furnace, or crystallization steps are required,and the process requires no semiconductor material deposition (typicallya high-temperature process). As a result, the process may be performedentirely on the back-end equipment of a semiconductor processing lineand may be performed on top of materials that might be damaged by highthermal budgets (e.g., many programmable materials such as chalcogenidealloys are typically susceptible to high temperatures, leading tomicrostructural damage).

In various embodiments, the process may be repeated (one or more times)to form an additional layer (or layers) of programmable memory elements(that will generally share the same vertical memory cell via connectionpost to a single memory cell in the substrate or in a lower layer). Toaccess the memory elements of each layer individually, separateend-of-row vertical connectors (not shown) may be formed, and this, inlight of the present teaching, will be apparent to one skilled in theart.

The programmable-memory-storage state change generally occurs at thepoint of contact of a corner of the programmable material 6400 about theconductive vertical via connection posts of the memory cells to a cornerof the conductive material between the columns and along the rows. Thiscorner-to-corner, self-aligned contact formed by the crossing of thestraight-sided rows with the pattern of the straight-sided columnsresults in a high concentration of current flowing through thiscorner-to-corner contact.

In the embodiment depicted in FIG. 65, each conductive vertical viaconnection post of the memory cells is contacted in four points—twopoints each to each of the rows on either side of the post. To limitthis contact to a single point between a given row and a givenconductive vertical via connection posts of the memory cells,embodiments of the invention incorporate the steps depicted in FIGS.66-72 to replace the steps depicted in FIGS. 63-65. Referring back toFIG. 62 and to FIGS. 66-72, a layer of photoresist 6600 is deposited onthe surface over planarized conductive material 6100. The photoresist6600 is then exposed and developed to reveal only one of the fourcorners of the cups formed when etching as described above withreference to FIG. 62. Thus, the etch only opens up one corner of thearea around the conductive vertical via connection post of the memorycells, as shown in FIG. 69. Photoresist 6600 is removed (FIG. 70), andprogrammable material 6400 is, as described above, deposited (FIG. 71)and polished (FIG. 72) such that each conductive vertical via connectionpost of the memory cells is contacted at a single point to the row toone side of the post.

In another embodiment, long stripes are formed using a half-critical(twice the critical minimum feature size geometry) mask in photoresist7300 (FIG. 73) and developed (FIG. 74) to expose half of each memorycell for each pair of columns. In this way, the above-describedcup-formation etch opens one corner of the cup to both adjacent rows(FIG. 75), and when the photoresist 7300 is stripped (FIG. 76) and theprogrammable material 6400 is deposited (FIG. 77) and polished (FIG.78), each conductive vertical via connection post of the memory cellshas two programmable contact points—one to each row to either side ofthe post. Thus, if the selection of an individual post is made in thesubstrate (as opposed to a selection of a single post by itsintersection with a selected row) then two programmable elements arepresent for each memory cell post location (i.e., two bits per cell). Insuch a case, selection of a single element is made through the selectionof a single adjacent row (of the two adjacent rows).

In another variation, each programmable element may be programmed torepresent more than one bit of data. For example, with a programmableelement comprising a chalcogenide alloy such as GST, one state may bethe crystalline (i.e., reset and low-resistance) state, and anotherstate may be the amorphous (i.e., programmed and high-resistance) state.Additional bits of programmable data may be provided by includingintermediate resistance states having resistances between those of thesetwo states. Such elements may also be referred to as multi-level cell(MLC) memory elements. With this approach, a programmable material inwhich four states are utilized along with the two programmable elementsper memory cell post and multiple layers of programmable elementsconnecting to a single post result in many bits of data per memory cell.For example, a memory device having a 50-nm pitch in both the row andcolumn direction (i.e., F approximately equal to 25 nm), two memoryelements per cell, four bits per MLC memory element, and 16 layersstacked in three dimensions has a storage capacity of about 5 terabitsin a single 1 cm² die. Various embodiments of the present inventioncombine two or more of the above-described density-enhancing techniquesin a single device (e.g., to have two or more of three-dimensionalstacking, two or more programmable elements per memory cell, and/ormulti-level cell programming of memory elements). FIG. 79 illustratesthe embodiment of FIG. 72 having a second, stacked layer of memory cellsfabricated thereon. The structure of FIG. 79 may be formed by repeatingthe steps described above with respect to FIGS. 29-72 atop the structureillustrated in FIG. 72. In various embodiments, such stacking may berepeated more than once to form memory devices having increased storagecapacity but with substantially similar footprints.

As explained above in reference to FIG. 63, the non-conductivedielectric material about the posts of the memory cells (i.e., layer2900 and spacer material 3500) is etched, thus exposing the post as wellas the corner of the conductive material (on the side of an adjacentrow) at the corner of the cup. In an embodiment, photolithography andthe etch are performed to etch only a single one of these four “corners”around each post. The corner so exposed may be etched with a briefclean-up etch (e.g., a short wet etch in a diluted etchant such ashydrofluoric acid, or a non-isotropic RIE etch) to ensure the contactmaterial is sufficiently exposed in the corner.

The memory storage elements described herein may be implemented withcross-point memory arrays in which the memory arrays' surroundingcircuitry is also implemented in accordance with embodiments of thepresent invention; these arrays may be one of many tiles or sub-arraysin a larger device or an array within a three-dimensional arrangement ofarrays or tiles. In such a memory device, the storage cells mayincorporate field-emitters, diodes, or other non-linear conductordevices that conduct current better in one direction than the other fora given applied voltage. The storage element may be a fuse, an antifuse,a phase-change material such as a chalcogenide (including a chalcogenidein which the programmed resistivity may have two or more selectedvalues), a resistance that may be electrically altered, or afield-emitter element programming mechanism including an element forwhich the resistance or the volume is changeable and programmable.

Memory devices incorporating embodiments of the memory storage elementsdescribed herein may be applied to memory devices and systems forstoring digital text, digital books, digital music (such as MP3 playersand cellular telephones), digital audio, digital photographs (whereinone or more digital still images can be stored including sequences ofdigital images), digital video (such as personal entertainment devices),digital cartography (wherein one or more digital maps can be stored,such as GPS devices), and any other digital or digitized information aswell as any combinations thereof. Devices incorporating embodiments ofthe memory storage elements described herein may be embedded orremovable, and may be interchangeable among other devices that canaccess the data therein. Embodiments of the memory storage elementsdescribed herein may be packaged in any variety of industry-standardform factor, including Compact Flash, Secure Digital, MultiMedia Cards,PCMCIA Cards, memory stick, any of a large variety of integrated circuitpackages including ball grid arrays, dual in-line packages (DIPs),SOICs, PLCC, TQFPs and the like, as well as in proprietary form factorsand custom designed packages. These packages can contain just the memorychip, multiple memory chips, one or more memory chips along with otherlogic devices or other storage devices such as PLDs, PLAs,micro-controllers, microprocessors, controller chips or chip-sets orother custom or standard circuitry.

Embodiments of the present invention may incorporate PMOS transistorsfor a reversed-polarity array by altering the dopant profiles. Themanufacturing techniques described herein may also be used to formbipolar transistors, P-N, P-i-N, or four-layer diodes (i.e., thyristorsor the like) or other switching devices (e.g., SCRs, diacs, or thelike). Two-terminal device arrays utilizing P-N or P-i-N diodes may befabricated by omitting the middle contact (i.e., the gate contact trenchmay utilized for STI isolation simply by filling with oxide, without thegate channel doping step, instead of filling with gate polysilicon) andimplementing an array by utilizing the doped semiconductor channels inone direction and conductors across the tops of the devices (each inseries with a programmable element) in the orthogonal direction (e.g., atypical diode array). The transistor may be utilized such that the drainis common to the transistors connected by a single word line (asdescribed above, the source is common to the transistors connected by asingle word line).

Embodiments of the present invention will typically, though notnecessarily, be built as integrated circuits by means ofphotolithography. Embodiments may be implemented with a traditional twodimensional arrangement of storage elements or with a three-dimensionalarrangement of storage elements. The storage elements may include afusible material, an antifusible material, a phase-change material (forPRAM) such as a chalcogenide alloy material (including a chalcogenide inwhich the programmed resistivity may be one of two resistance valuesand, in the case of more than one bit per cell storage cells, in whichthe programmed resistivity may be one of three or more resistancevalues), a resistive change material (for RRAM), a ferroelectricmaterial (for FRAM), a magnetic or magnetoresistive material (for MRAM),magnetic tunnel junction or spin-transfer torque element (for MTJ-RAM orSTT-RAM), a dual layer oxide memory element comprising a junction and aninsulating metal oxide and a conductive metal oxide (see U.S. Pat. No.6,753,561 by Rinerson), or a trapped charge device (see U.S. Pat. No.7,362,609 by Harrison et al.). The phase-change material, such as achalcogenide material, may be programmed or erased. Orientation of thearray may be rotated, i.e., the “rows” may be “columns,” or vice versa.The polarity of the voltages and direction of the steering elements inthe storage bits may be reversed while still keeping within what isenvisioned by embodiments of the present invention. The presentinvention may be applied to other memory technologies as well includingstatic RAM, Flash memory, EEPROM, DRAM, and others.

Memory devices incorporating embodiments of the present invention may beapplied to memory devices and systems for storing digital text, digitalbooks, digital music (such as MP3 players and cellular telephones),digital audio, digital photographs (wherein one or more digital stillimages may be stored including sequences of digital images), digitalvideo (such as personal entertainment devices), digital cartography(wherein one or more digital maps can be stored, such as GPS devices),and any other digital or digitized information as well as anycombinations thereof. Devices incorporating embodiments of the presentinvention may be embedded or removable, and may be interchangeable amongother devices that can access the data therein. Embodiments of theinvention may be packaged in any variety of industry-standard formfactor, including Compact Flash, Secure Digital, MultiMedia Cards,PCMCIA Cards, memory stick, any of a large variety of integrated circuitpackages including ball grid arrays, DIPs, SOICs, PLCC, TQFPs and thelike, as well as in proprietary form factors and custom designedpackages. These packages may contain just the memory chip, multiplememory chips, one or more memory chips along with other logic devices orother storage devices such as PLDs, PLAs, micro-controllers,microprocessors, controller chips or chip-sets or other custom orstandard circuitry.

The terms and expressions employed herein are used as terms andexpressions of description and not of limitation, and there is nointention, in the use of such terms and expressions, of excluding anyequivalents of the features shown and described or portions thereof. Inaddition, having described certain embodiments of the invention, it willbe apparent to those of ordinary skill in the art that other embodimentsincorporating the concepts disclosed herein may be used withoutdeparting from the spirit and scope of the invention. Accordingly, thedescribed embodiments are to be considered in all respects as onlyillustrative and not restrictive.

1. A memory device comprising: a substrate; and disposed over thesubstrate, an array of vertical memory switches each having at leastthree terminals and a cross-sectional area less than 6F².
 2. The memorydevice of claim 1, wherein each memory switch has a cross-sectional arealess than approximately 4F².
 3. The memory device of claim 1, wherein atleast one memory switch comprises a MOS transistor.
 4. The memory deviceof claim 1, wherein at least one memory switch comprises a four-layerdiode.
 5. The memory device of claim 1, wherein at least two memoryswitches share a common gate for operating a channel of each of thememory switches.
 6. The memory device of claim 1, further comprising twointerleaved pluralities of bit lines for selecting a memory switch, oneplurality of bit lines being connected to a first selection circuit on afirst side of the array of memory switches and the other plurality ofbit lines being connected to a second selection circuit on a second sideof the array opposing the first side.
 7. The memory device of claim 1,further comprising a first array of programmable memory elementsdisposed over the array of memory switches, each memory element in thefirst array being electrically connected to at least one of the memoryswitches through a conductive post.
 8. The memory device of claim 7,further comprising, disposed over the first array of programmable memoryelements, a second array of programmable memory elements, each memoryelement in the second array being electrically connected to at least oneof the memory switches through a conductive post.
 9. The memory deviceof claim 7, wherein each memory element in the first array comprises atleast one of a phase-change material, a resistive-change material, or aone-time-programmable element.
 10. The memory device of claim 1, furthercomprising peripheral circuitry electrically connected to the array ofmemory switches, the peripheral circuitry comprising a plurality ofvertical MOS transistors.
 11. The memory device of claim 1, wherein F isless than approximately 25 nm.
 12. The memory device of claim 1, whereineach vertical memory switch corresponds to a single bit.
 13. The memorydevice of claim 1, wherein each vertical memory switch corresponds to aplurality of bits.
 14. A method of forming a memory device, the methodcomprising: providing a substrate; forming a source layer on thesubstrate; forming a channel layer over the source layer, the channellayer having a doping type different from a doping type of the sourcelayer; forming a drain layer over the channel layer, the drain layerhaving a doping type different from a doping type of the channel layer;and patterning the source, channel, and drain layers into an array ofmemory switches each having a cross-sectional area less than 6F². 15.The method of claim 14, wherein patterning the source, channel, anddrain layers comprises: forming a plurality of generally parallelisolation trenches intersecting the source, channel, and drain layers;depositing a dielectric material into the plurality of isolationtrenches; and planarizing the dielectric material such that a topsurface of the dielectric material is substantially coplanar with a topsurface of the drain layer.
 16. The method of claim 15, whereinpatterning the source, channel, and drain layers further comprises:forming a plurality of generally parallel gate trenches intersecting theisolation trenches, wherein each memory switch is bounded byintersecting isolation trenches and gate trenches.
 17. The method ofclaim 16, wherein the cross-sectional area of each memory switch is lessthan approximately 4F².
 18. The method of claim 16, further comprising:forming a gate dielectric in contact with the channel layer within thegate trenches; depositing a gate contact material in the gate trenches;and planarizing the gate contact material such that a top surface of thegate contact material is substantially coplanar with a top surface ofthe dielectric material in the isolation trenches.
 19. The method ofclaim 14, further comprising: forming a conductive post over a memoryswitch; and forming a programmable material in contact with theconductive post, thereby forming a programmable memory cell.
 20. Themethod of claim 19, wherein the programmable material comprises at leastone of phase-change material, a resistive-change material, or aone-time-programmable material.
 21. The method of claim 19, whereinforming the programmable material comprises etching at least a portionof a dielectric material disposed around the conductive post to form arecess, at least substantially filling the recess with the programmablematerial, and planarizing the programmable material such that a topsurface of the programmable material is substantially coplanar with atop surface of the conductive post.
 22. The method of claim 21, whereinthe conductive post has a substantially quadrilateral cross-sectionalarea, and the programmable material is disposed in contact with only onecorner of the conductive post.
 23. The method of claim 21, wherein theconductive post has a substantially quadrilateral cross-sectional area,and the programmable material is disposed in contact with only twocorners of the conductive post.
 24. The method of claim 14, whereinforming the source, channel, and drain layers each comprises ionimplantation of dopants into the substrate.
 25. The method of claim 14,wherein forming the source, channel, and drain layers each comprisesdeposition of a semiconductor material over the substrate.
 26. Themethod of claim 14, further comprising, substantially simultaneouslywith patterning the source, channel, and drain layers into an array ofmemory switches, patterning the source, channel, and drain layers into aplurality of peripheral devices disposed proximate the array of memoryswitches.
 27. The method of claim 26, further comprising electricallyconnecting the peripheral devices to the array of memory switches.
 28. Amemory device comprising: a substrate defining a die; and disposed overthe substrate within the die, an array of vertical memory switches, eachhaving at least three terminals and defining a memory array of at leastone terabit.
 29. The memory device of claim 28, wherein each verticalmemory switch corresponds to a single bit.
 30. The memory device ofclaim 28, wherein each vertical memory switch corresponds to a pluralityof bits.
 31. The memory device of claim 28, wherein the die has an areaof 1 cm² and the memory array has at least 5 terabits.
 32. The memorydevice of claim 28, wherein at least one memory switch comprises a MOStransistor.
 33. The memory device of claim 28, wherein at least onememory switch comprises a four-layer diode.
 34. The memory device ofclaim 28, wherein at least two memory switches share a common gate foroperating a channel of each of the memory switches.
 35. A memory devicecomprising: a vertical conductor disposed over a substrate; a switch forselecting the vertical conductor; and a plurality of layers, eachcomprising a plurality of programmable memory elements, disposed overand electrically connected to the vertical conductor.
 36. The memorydevice of claim 35, wherein the switch comprises a vertical memoryswitch having at least three terminals and a cross-sectional area lessthan 6F².
 37. The memory device of claim 35, wherein at least one of theplurality of programmable memory elements comprises at least one of aphase-change material, a resistive-change material, or aone-time-programmable element.
 38. A memory device comprising: a firstset of parallel rows of memory cells connected together; a second set ofparallel rows of memory cells connected together; and a controlconductor selectable to activate at least one of the rows of the firstset and at least one of the rows of the second set, wherein selection of(i) one of the sets, and (ii) at least one of the rows by the controlconductor, causes activation of at least one row of memory cells.